Advanced Semiconductor and Organic Nano-Techniques by Hadis Morkoc

By Hadis Morkoc

  • Materials Scientists, Physicists, Engineers.

Preface for quantity I

, Pages xiii-xv, Hadis Morkoç
List of participants for quantity I

, Page xvii
Preface for quantity II

, Pages ix-xiii, Hadis Morkoç
List of individuals for quantity II

, Pages xv-xvi
Preface for quantity III

, Pages xi-xvii, Hadis Morkoç
List of participants for quantity III

, Pages xix-xx
Chapter 1 - rising Advances in Microelectronics, Optoelectronics and Bioelectronics

, Pages 1-145, H. Morkoç
Chapter 2 - The problem of constructing a Roadmap from Microelectronics to Nanoelectronics

, Pages 147-209, R. Doering
Chapter three - CMOS Scaling to Nanometer Lengths

, Pages 211-238, Y. Taur
Chapter four - Sub-20-nm Electron Devices

, Pages 239-302, ok. Likharev
Chapter five - functions of unmarried Electron Tunnelling

, Pages 303-324, J.P. Pekola
Chapter 6 - Silicon on Insulator: know-how and Devices

, Pages 325-365, S. Cristoloveanu, F. Balestra
Chapter 7 - Quantum Dot Lasers

, Pages 367-410, D.G. Deppe, H. Huang
Chapter eight - Nanotechnology and Magnetic Memories

, Pages 411-439, A.V. Pohm
Chapter nine - Quantum info technological know-how from the viewpoint of a tool and fabrics Engineer

, Pages 441-502, S. Bandyopadhyay
Chapter 1 - Engineering the digital constitution and the Optical homes of Semiconductor Quantum Dots

, Pages 1-50, M. De Giorgi, R. Rinaldi, T. Johal, G. Pagliara, A. Passaseo, M. De Vittorio, M. Lomascolo, R. Cingolani, A. Vasanelli, R. Ferreira, G. Bastard
Chapter 2 - GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors

, Pages 51-145, H. Morkoç
Chapter three - Ultraviolet Photodetectors in response to GaN and AlGaN

, Pages 147-190, H. Temkin
Chapter four - natural Field-Effect Transistors for Large-Area Electronics

, Pages 191-240, C.D. Dimitrakopoulos
Chapter five - natural Optoelectronics: The Case of Oligothiophenes

, Pages 241-291, G. Gigli, M. Anni, R. Cingolani, G. Barbarella
Chapter 6 - Single-Walled Carbon Nanotubes for Nanoelectronics

, Pages 293-343, M.S. Fuhrer
Chapter 7 - brief Wavelength III-Nitride Lasers

, Pages 345-405, A.V. Nurmikko
Chapter 1 - electric Conduction via Molecules

, Pages 1-41, F. Zahid, M. Paulsson, S. Datta
Chapter 2 - Molecular digital Devices

, Pages 43-187, J. Chen, M.A. Reed, S.M. Dirk, D.W. expense, A.M. Rawlett, J.M. travel, D.S. Grubisha, D.W. Bennett
Chapter three - Fabrication of Nanoscale buildings utilizing STM and AFM

, Pages 189-224, A.A. Baski
Chapter four - Optical Nanosensors for organic Applications—Spectroscopic innovations on the mobile Level

, Pages 225-250, B.M. Cullum, T. Vo-Dinh
Chapter five - present concerns and Advances in Dissociated telephone Culturing on Nano-and Microfabricated Substrates

, Pages 251-318, H.G. Craighead, C.D. James, A.M.P. Turner
Chapter 6 - electric Fields: Their Nature and impression on organic Systems

, Pages 319-346, R.J. Colello, J.K. Alexander
Chapter 7 - DNA Chips Come of Age

, Pages 347-370, G. Ramsay
Chapter eight - organic Computation: From DNA to Cells

, Pages 371-405, C.C. Maley
Chapter nine - mobile Manipulations

, Pages 407-482, C. González, S.D. Collins
Chapter 10 - Fluidics in Microchannels

, Pages 483-504, P.M.St. John, M. Deshpande
Chapter eleven - Hybrid organic Nanomachines

, Pages 505-540, J.J. Schmidt, C.D. Montemagno
Index for quantity I

, Pages 503-519
Index for quantity II

, Pages 407-421
Index for quantity III

, Pages 541-555

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At present, almost the entire range of colors can be obtained with use of nitride-based LEDs covering the blue and green colors and GaAlAs or GalnAlP LEDs covering the red end of the spectrum. In addition, tremendous strides have been made in organic LEDs, meaning polymers and organic crystals used as LED material, to produce all three primary colors, red, green, and blue. The difficulty has until recently been in obtaining blue with sufficient brightness and longevity. White light is generated very conveniently by pumping an inorganic crystal, or an organic medium with appropriate dyes, with nitride based blue LEDs.

20 2. H. MoRKOC Sii __ vGCv MODFET STRUCTURES Formation of the 2D electron or hole gas is also possible using Sii_vGev, as discussed in a review by Zhou and Morko^ (1993). Mii et ciL (1991) used a SiGe layer graded from 0 to 30% followed by a SioyGcos buffer layer, both of which were relaxed. 3 layer. A maximum Hall mobility at 4 K of 125 000 cm" V"'s~^ has been obtained. 8 X 10^ ^ at 77 K and below. Informal results indicate that mobilities close to 300000cm^V~^ s~^ can be obtained which compares very well with about 30000cm^V~'s"^ attainable in Si/Si02 system.

12 and a Si spacer of 60 A—for a sheet carrier concentration of-^8 x lO'^ cm"*^. The values of hole mobility is roughly an order of magnitude higher than the highest values reported in p-type Si inversion layers and are most probably limited by remote ionized impurity scattering from the heavily doped Si layer, and/or the interfacial quaHty at the Si/SiGe heterointerface. Murakami et al (1990), utilizing MBE grew a modulation-doped heterostructure where the strain at the heterointerface (p-SiosGcos/Ge layers) is controlled by the Si composition (1 -x) of the Sii -vGCv buffer layer.

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