Coherent Optical Interactions in Semiconductors by J. Kuhl, E. J. Mayer, G. Smith, R. Eccleston (auth.), R. T.

By J. Kuhl, E. J. Mayer, G. Smith, R. Eccleston (auth.), R. T. Phillips (eds.)

The NATO complex study Workshop on Coherent Optical strategies in Semiconductors used to be held in Cambridge, England on August 11-14,1993. the belief of protecting this Workshop grew from the new upsurge in task on coherent temporary results in semiconductors. the improvement of this box displays advances in either gentle assets and the standard of semiconductor buildings, such that tunable optical pulses are actually usually on hand whose period is shorter than the dephasing time for excitonic states in quantum wells. It used to be consequently no shock to the organisers that because the programme constructed, there emerged a heavy emphasis on time-resolved four-wave blending, relatively in quantum wells. however, different concerns occupied with coherent results ensured that numerous papers on comparable difficulties contributed a few sort. the themes mentioned on the workshop concentrated on what's a slightly new box of analysis, and benefited greatly via having individuals representing a number of the critical teams operating during this quarter. a number of subject matters emerged throughout the invited contributions on the Workshop. One very important improvement has been the cautious exam of the two-level version of excitonic results; a version which has been remarkably profitable regardless of the anticipated complexities coming up from the semiconductor band constitution. certainly, modest extensions to the 2 point version were in a position to provide an invaluable account for a number of the complex polarisation dependence of four-wave blending indications from GaAs quantum wells. This paintings essentially is resulting in a much better knowing of excitons in limited systems.

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Since the scattering rates Wkk' are positive and Eq. (36) is linear Jl/ 45 (0) . 531 eV (1\"·:",·\ ·.... ' '\ . l! (b) ! ' ,I : : \:'. -3 em ",t' -------- ---' X ,' ," ,, I I ; -..... ::.. ,' 4x10 16cm- 3 190 fs . _,-- - ,_. 50 II ~'---, 60 fs ------ - - --. 54 I " , I ................... I I , .. 48 ," \ '- ..... t'-\.. /". ...... , ... ',' I\ "" \ , \ \ --- ..... - - - .... " ......... " '.

G. Steel, "Polarization-dependent transient nonlinear optical response of heavy- and light-hole excitons in GaAs", Quantum Electronics and Laser Science Conference, QELS-93, Baltimore, May 2-7 (1993); 1993 Techn. Digest Series, Vol. 12. 58. Z. Hu, R. W. , QELS-93, Baltimore, May 2-7, (1993), 1993 Techn. Digest Series, Vol. 12; and "Photon echo and valence-band mixing in semiconductor quantum wells", Phys. Rev. B 47: 15679 (1993). 31 COHERENT EXCITONIC AND FREE CARRIER DYNAMICS IN BULK GaAs AND HETEROSTRUCTURES T.

30) The constant C is usually treated as a fitting parameter, here taken to be 4. 112 When using the screened Coulomb potential, the Hartree Fock self-energy (Eq. (24» must be supplemented by the Coulomb-hole term 74 according to (31) Numerical method For the numerical solution of the semiconductor Bloch equations we have adopted a combined technique: The equation for the polarization has been solved by direct numerical integration while the equation for the distribution function has been solved by means of a Monte Carlo simulation.

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